Dihalide germanium(II) precursors for germanium-containing film depositions
US8691668B2 · kind B2 · utility
6Cited by
8References
17Claims
0Family size
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Inventors
Key dates
| Filing date | Sep 2, 2010 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Sep 2, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Disclosed are GeX2Ln molecules, with X being a halide, L being an adduct other than C4H8O2, and 0.5≦n≦2. These molecules have lower melting points and/or increased volatility compared to GeCl2-dioxane. Also disclosed is the use of such molecules for deposition of thin films, such as chalcogenide, SiGe, and GeO2 films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.