TSV pillar as an interconnecting structure

US8691691B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mukta G. Farooq · Hopewell Junction, US
• Troy L. Graves-Abe · Wappingers Falls, US
• William Francis Landers · Wappingers Falls, US
• Kevin S. Petrarca · Newburgh, US
• Richard P. Volant · New Fairfield, US

Key dates

• Filing date: Jul 29, 2011
• Grant date: Apr 8, 2014
• Expiry date: Jun 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3512
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention includes embodiments of a processing method, and resulting structure, for building a chip having a TSV pillar which can be used as an interconnecting structure. The process includes the deposition of a dual diffusion barrier between the TSV and the substrate the TSV is embedded within. The TSV is then exposed from the back side of the substrate so that at least a portion of the TSV protrudes from the substrate and can be used as a contact for connecting the chip to another surface. The resulting TSV is rigid, highly conductive, can be placed in a tightly pitched grid of contacts, and reduces effects of CTE mismatch.