Resistance variable memory device including nano particles and method for fabricating the same
US8692223B2 · kind B2 · utility
4Cited by
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14Claims
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Key dates
| Filing date | Aug 28, 2012 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Aug 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A resistance variable memory device includes: a first electrode; a second electrode; a resistance variable layer interposed between the first electrode and the second electrode; and nano particles that are disposed in the resistance variable layer and have a lower dielectric constant than the resistance variable layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.