Micro electronic device having CMOS circuit and MEMS resonator formed on common silicon substrate
US8692338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2012 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Nov 9, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0714
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.