Patent · US Active

Projection objective for a microlithographic EUV projection exposure apparatus

US8693098B2 · kind B2 · utility

0Cited by

3References

14Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Siegfried Rennon · Würzburg, DE
Hans-Juergen Mann · Oberkochen, DE
Thomas Schicketanz · Aalen, DE

Key dates

Filing date	Oct 14, 2010
Grant date	Apr 8, 2014
Priority date	—
Expiry date	Feb 19, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG02B5/00
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A projection objective for a microlithographic EUV projection exposure apparatus includes a first mirror and a second mirror. The first mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The second mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The first and second mirrors are configured so that, with otherwise equal irradiation by EUV light, the mirror substrate of the first mirror compacts less than the mirror substrate of the second mirror under the effect of the EUV light.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.