Method for feeding arsenic dopant into a silicon crystal growing apparatus
US8696811B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2009 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jan 31, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.