Method of modifying chemically amplified resist pattern, modifier for chemically amplified resist pattern, and resist pattern structure
US8697342B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2011 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jul 19, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclose herein is a method of modifying a positive-type chemically amplified resist pattern, including the steps of, applying to a surface of a resist pattern, an aqueous solution of a modifier for the positive-type chemically amplified resist pattern, the aqueous solution containing a water-soluble cross-linking agent and a penetration accelerator, the cross-linking agent and the penetration accelerator being dissolved in water or a mixed solvent containing water as a main ingredient, so as to permit the cross-linking agent to penetrate the resist pattern, removing a surplus of the cross-linking agent, and irradiating the resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.