Method of forming a semiconductor structure

US8697505B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Po-Chih Chen · Hsinchu, TW
• Jiun-Lei Jerry Yu · Dashulong, TW
• Fu-Wei Yao · Hsinchu, TW
• Chun-Wei Hsu · Taichung, TW
• Fu-Chih Yang · Fengshang, TW
• Chun Lin Tsai · Baoshan, TW

Key dates

• Filing date: Sep 15, 2011
• Grant date: Apr 15, 2014
• Expiry date: Oct 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A semiconductor structure is disclosed. The semiconductor structure includes a first layer. A second layer is disposed on the first layer and different from the first layer in composition. An interface is between the first layer and the second layer. A third layer is disposed on the second layer. A gate is disposed on the third layer. A source feature and a drain feature are disposed on opposite sides of the gate. Each of the source feature and the drain feature includes a corresponding metal feature at least partially embedded in the second and the third layer. A corresponding intermetallic compound underlies each metal feature. Each intermetallic compound contacts a carrier channel located at the interface.