Manufacturing method of semiconductor device having N-channel MOS transistor, P-channel MOS transistor and expanding or contracting film
US8697513B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 8, 2013 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | May 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a second direction, in a plan view, an n-channel MOS transistor and an expanding film are adjacent. Therefore, the n-channel MOS transistor receives a positive stress in the direction in which a channel length is extended from the expanding film. As a result, a positive tensile strain in an electron moving direction is generated in a channel of the n-channel MOS transistor. On the other hand, in the second direction, in a plan view, a p-channel MOS transistor and the expanding film are shifted from each other. Therefore, the p-channel MOS transistor receives a positive stress in the direction in which a channel length is narrowed from the expanding film. As a result, a positive compressive strain in a hole moving direction is generated in a channel of the p-channel MOS transistor. Thus, both on-currents of the n-channel MOS transistor and the p-channel MOS transistor can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.