Semiconductor device and method for manufacturing the same
US8697527B2 · kind B2 · utility
1Cited by
1References
4Claims
0Family size
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Key dates
| Filing date | Jul 31, 2013 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jul 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device includes an isolation layer formed on a semiconductor substrate; an active region defined by the isolation layer; at least one gate line formed to overlap with the active region; at least one first active tab formed on a first interface of the active region which overlaps with the gate line; and a first gate tab formed on a second interface facing away from the first interface in such a way as to project from the gate line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.