Composition and method for polishing polysilicon
US8697576B2 · kind B2 · utility
4Cited by
31References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2010 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Dec 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.