Apparatus for detecting film delamination and a method thereof
US8698106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2009 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | May 19, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0683
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus are described herein which allow the progression of delamination of a film to be monitored. An interferometer is used to detect the onset and progression of thin film delamination. By projecting one or more wavelengths at a surface, and measuring the reflectance of these projected wavelengths, it is possible to monitor the progression of the delamination process. Testing has shown that different stages of the delamination process produce different reflectance graphs. This information can be used to establish implantation parameters, or can be used as an in situ monitor. The same techniques can be used for other applications. For example, in certain implantation systems, such as PECVD, a film of material may developed on the walls of the chamber. The techniques described herein can be used to monitor this separation, and determine when preventative maintenance may be performed on the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.