Implant free quantum well transistor, method for making such an implant free quantum well transistor and use of such an implant free quantum well transistor

US8698129B2 · kind B2 · utility

Assignees

• IMEC · BE
• Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

• Geert Hellings · Halle, BE
• Geert Eneman · Heverlee, BE

Key dates

• Filing date: Dec 20, 2012
• Grant date: Apr 15, 2014
• Expiry date: Dec 20, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60

Abstract

An implant free quantum well transistor wherein the doped region comprises an implant region having an increased concentration of dopants with respect to the concentration of dopants of adjacent regions of the substrate, the implant region being substantially positioned at a side of the quantum well region opposing the gate region.