Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities
US8698221B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2011 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jun 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor includes a first electrode, a first dielectric layer disposed on the first electrode, the first dielectric layer having a tetragonal crystal structure and including a first metal oxide layer doped with a first impurity, a second dielectric layer disposed on the first metal oxide layer, the second dielectric layer having a tetragonal crystal structure and including a second metal oxide layer doped with a second impurity, and a second electrode disposed on the second dielectric layer. The first dielectric layer has a lower crystallization temperature and a substantially higher dielectric constant than the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.