Semiconductor device and method of manufacturing the same
US8698231B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 30, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Sep 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
Abstract
A semiconductor device includes vertical channel layers, a pipe channel layer coupling bottoms of the vertical channel layers, a pipe gate contacting a bottom surface and side surfaces of the pipe channel layer, and a dummy pipe gate formed of a non-conductive material and contacting a top surface of the pipe channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.