Avalanche photodiode and method for manufacturing the avalanche photodiode

US8698268B2 · kind B2 · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Eiji Yagyu · Tokyo, JP
• Eitaro Ishimura · Tokyo, JP
• Masaharu Nakaji · Tokyo, JP

Key dates

• Filing date: Jun 14, 2011
• Grant date: Apr 15, 2014
• Expiry date: Jun 14, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

An avalanche photodiode including a first electrode; and a substrate including a first semiconductor layer of a first conduction type electrically connected to the first electrode, in which at least an avalanche multiplication layer, a light absorption layer, and a second semiconductor layer of a second conduction type with a larger band gap than the light absorption layer are deposited on the substrate. The second semiconductor layer is separated into inner and outer regions by a groove formed therein, the inner region electrically connected to a second. With the configuration, the avalanche photodiode has a low dark current and high long-term reliability. In addition, the outer region includes an outer trench, and at least the light absorption layer is removed by the outer trench to form a side face of the light absorption layer. With the configuration, the dark current can be further reduced.