Semiconductor devices having reduced substrate damage and associated methods
US8698272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2011 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Apr 9, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.