Memory element and memory apparatus
US8699264B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Nov 19, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.