Grid assemblies for use in ion beam etching systems and methods of utilizing the grid assemblies
US8703001B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 2, 2008 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Oct 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A grid assembly for use in an etching system for etching at least a wafer. The grid assembly may include a first grid member, a second grid member, and a third grid member. When the grid assembly is used in etching the wafer, the first grid member may be electrically grounded, the second grid member may be electrically negative relative to the first grid member, and the third grid member may be electrically positive relative to the first grid member. The second grid member may be disposed between the first grid member and the third grid member. The first grid member may be thicker than at least one of the second grid member and the third grid member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.