Plasma processing apparatus, plasma processing method and storage medium
US8703002B2 · kind B2 · utility
325Cited by
11References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2013 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Jan 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.