Thyristor comprising a special doped region characterized by an LDD region and a halo implant

US8703547B2 · kind B2 · utility

Assignee

• Grace Semiconductor Manufacturing Corporation · CN

Inventors

• Yi Shan · Shanghai, CN
• Jun He · Lo Wu, CN

Key dates

• Filing date: Dec 22, 2008
• Grant date: Apr 22, 2014
• Expiry date: Apr 2, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/251

Abstract

The present invention provides a device for electrostatic discharge and the method of manufacturing thereof. P-well is formed on the substrate, and a first N+ doped region, a second N+ doped region and a P+ doped region are formed in the P-well; both ends of each doped region adopt shallow trench isolation for isolation. A lightly doped source-drain region portion is formed between the first N+ doped region and the shallow trench isolation connected thereto. Under the source-drain region, a halo injection with an inverse type is formed. The reverse conduction voltage of the collector of the bipolar transistor is lowered through the introduction of special doped region and the adoption of lightly doped source-drain technology for manufacturing the source-drain region as well as the manufacturing of halo injection with inverse type under the source-drain region, thus reducing the trigger voltage of the device.