Graphene device and method for manufacturing the same

US8703558B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Qingqing Liang · Fishkill, US
• Zhi Jin · Beijing, CN
• Wenwu Wang · Beijing, CN
• Huicai Zhong · San Jose, US
• Xinyu Liu · Nanhu, CN
• Huilong Zhu · Poughkeepsie, US

Key dates

• Filing date: Feb 24, 2011
• Grant date: Apr 22, 2014
• Expiry date: Feb 24, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/882

Abstract

The invention provides a graphene device structure and a method for manufacturing the same, the device structure comprising a graphene layer; a gate region in contact with the graphene layer; semiconductor doped regions formed in the two opposite sides of the gate region and in contact with the graphene layer, wherein the semiconductor doped regions are isolated from the gate region; a contact formed on the gate region and contacts formed on the semiconductor doped regions. The on-off ratio of the graphene device is increased through the semiconductor doped regions without increasing the band gap of the graphene material, i.e., without affecting the mobility of the material or the speed of the device, thereby increasing the applicability of the graphene material in CMOS devices.