High quality GaN high-voltage HFETs on silicon
US8703561B2 · kind B2 · utility
2Cited by
2References
13Claims
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Key dates
| Filing date | Jul 17, 2013 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Jul 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/475
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Substrates of GaN over silicon suitable for forming electronics devices such as heterostructure field effect transistors (HFETs), and methods of making the substrates, are disclosed. Voids in a crystalline Al2O3 film on a top surface of a silicon wafer are formed. The top surface of the silicon wafer is along the <111> silicon crystal orientation. A plurality of laminate layers is deposited over the voids and the Al2O3 film. Each laminate layer includes an AN film and a GaN film. A transistor or other device may be formed in the top GaN film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.