Method for fabrication deep trench isolation structure
US8703577B1 · kind B1 · utility
6Cited by
4References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 17, 2012 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Dec 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3083
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a deep trench isolation structure, wherein the method comprising steps as follows: A first hard mask layer, a second hard mask layer and a third hard mask layer are firstly formed in sequence on a substrate. The third hard mask layer is then patterned using the second hard mask layer as an etching stop layer. Subsequently, a trench etching process is performed using the patterned third hard mask layer as a mask to form a deep trench in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.