Method and structure of monolithically integrated IC-MEMS oscillator using IC foundry-compatible processes
US8704238B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 5, 2011 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Dec 5, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00246
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A three-dimensional integrated circuit device includes a first substrate having a first crystal orientation comprising at least one or more PMOS devices thereon and a first dielectric layer overlying the one or more PMOS devices. The three-dimensional integrated circuit device also includes a second substrate having a second crystal orientation comprising at least one or more NMOS devices thereon; and a second dielectric layer overlying the one or more NMOS devices. An interface region couples the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.