Light emitting device and method of manufacturing the same
US8704246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2013 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Apr 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/873
Abstract
The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.