Light emitting device
US8704252B2 · kind B2 · utility
2Cited by
0References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2009 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Jun 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
Abstract
This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.