Semiconductor device and manufacturing method thereof

US8704299B2 · kind B2 · utility

Inventors

• Kiyonori Oyu · Tokyo, JP
• Kensuke Okonogi · Tokyo, JP
• Kazuto Mori · Osaka, JP

Key dates

• Filing date: Jan 8, 2013
• Grant date: Apr 22, 2014
• Expiry date: Jan 8, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

A semiconductor device capable of increasing ON current while reducing channel resistance and allowing transistors to operate independently and stably, having a fin formed to protrude from the bottom of a gate electrode trench, a gate insulating film covering the surfaces of the gate electrode trench and the fin, a gate electrode embedded in a lower part of the gate electrode trench and formed to stride over the fin via the gate insulating film, a first impurity diffusion region arranged on a first side face, and a second impurity diffusion region arranged on a second side face.