SOI devices for plasma display panel driver chip

US8704329B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Ming Qiao · Chengdu, CN
• Bo Luo · Beijing, CN
• Xi Hu · Tianjin, CN
• Jun Ye · Palo Alto, US
• Bo Zhang · Shanghai, CN
• Zhaoji Li · Shandong, CN

Key dates

• Filing date: Dec 29, 2010
• Grant date: Apr 22, 2014
• Expiry date: Dec 29, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/421

Abstract

SOI devices for plasma display panel driver chip, include a substrate, a buried oxide layer and an n-type SOI layer in a bottom-up order, where the SOI layer is integrated with an HV-NMOS device, an HV-PMOS device, a Field-PMOS device, an LIGBT device, a CMOS device, an NPN device, a PNP device and an HV-PNP device; the SOI layer includes an n+ doped region within the SOI layer at an interface between the n-type SOI layer and the buried oxide layer; and the n+ doped region has a higher doping concentration than the n-type SOI layer.