Selective removal of on-die redistribution interconnects from scribe-lines
US8704336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2007 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Jul 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective removal of on-die redistribution interconnect material from a scribe-line region is generally described. In one example, an apparatus includes a first semiconductor die having a redistribution layer comprising redistribution dielectric and one or more redistribution metal interconnects, a second semiconductor die coupled with the first semiconductor die, the second semiconductor die having a redistribution layer comprising redistribution dielectric and one or more redistribution metal interconnects, and a scribe-line region disposed between the first semiconductor die and second semiconductor die, the scribe-line region having a majority or substantially all of redistribution dielectric or redistribution metal, or suitable combinations thereof, selectively removed to enable die singulation through the scribe-line region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.