Solid-state imaging device with a photoelectric conversion element, and method thereof
US8704924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Feb 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/32
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device includes a substrate, a photoelectric conversion element provided on the light incidence side of the substrate and including a photoelectric conversion film sandwiched between a first electrode provided separately for each of pixels, and a second electrode provided opposite the first electrode, the photoelectric conversion film being made of an organic material or an inorganic material and generating a signal charge according to the quantity of incident light, an amplifier transistor having an amplifier gate electrode connected to the first electrode, and a voltage control circuit that is connected to the second electrode, and supplies a desired voltage to the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.