Optical defect amplification for improved sensitivity on patterned layers
US8705027B2 · kind B2 · utility
2Cited by
2References
16Claims
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Key dates
| Filing date | Jul 15, 2010 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Aug 23, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for wafer defect inspection may include, but is not limited to: providing an inspection target; applying at least one defect inspection enhancement to the inspection target; illuminating the inspection target including the at least one inspection enhancement to generate one or more inspection signals associated with one or more features of the inspection target; detecting the inspection signals; and generating one or more inspection parameters from the inspection signals. An inspection target may include, but is not limited to: at least one inspection layer; and at least one inspection enhancement layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.