Methods of fabricating semiconductor device
US8709834B2 · kind B2 · utility
1Cited by
15References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Mar 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes providing a wafer, forming a memory device which includes phase change material layer on the wafer, completing a wafer level process of manufacturing the semiconductor device, and performing a thermal treatment process on the wafer to densify the phase change material. To this end, the process temperature of the thermal treatment is higher than the crystallization temperature of the phase change material and lower than the melting point of the phase change material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.