Patent · US Active

Hybrid CMOS nanowire mesh device and PDSOI device

US8709888B2 · kind B2 · utility

18Cited by

10References

11Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Josephine B. Chang · Mahopac, US
Leland Chang · New York, US
Chung-Hsun Lin · White Plains, US
Jeffrey W. Sleight · Ridgefield, US

Key dates

Filing date	Dec 16, 2011
Grant date	Apr 29, 2014
Priority date	—
Expiry date	Jan 14, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/938
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method of forming a hybrid semiconductor structure on an SOI substrate. The method includes an integrated process flow to form a nanowire mesh device and a PDSOI device on the same SOI substrate. Also included is a semiconductor structure which includes the nanowire mesh device and the PDSOI device on the same SOI substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.