Method and system for utilizing Perovskite material for charge storage and as a dielectric
US8709891B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jun 14, 2013 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Jun 14, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0007
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory devices and methods for providing the memory devices are provided. The memory devices utilize multiple metal oxide layers. The methods for providing the memory devices can include providing a transistor; producing a capacitor that includes metal layers and metal oxide layers; connecting the capacitor to a side of the transistor; and providing a wordline, bitline, and driveline through connection with the transistor or the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.