Zhida Lan
21Patents
6h-index
34Co-inventors
65Inventor score
Filing activity: Nov 4, 2002 → Jan 14, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6847047B2 | Methods that facilitate control of memory arrays utilizing zener diode-like devices | Physics | 28 | Expired |
| US6960783B2 | Erasing and programming an organic memory device and method of fabricating | Physics | 13 | Expired |
| US8693233B2 | Re-writable resistance-switching memory with balanced series stack | Physics | 10 | Active |
| US7273766B1 | Variable density and variable persistent organic memory devices, methods, and fabrication | Physics | 9 | Expired |
| US8861258B2 | Set/reset algorithm which detects and repairs weak cells in resistive-switching memory device | Physics | 7 | Active |
| US7450416B1 | Utilization of memory-diode which may have each of a plurality of different memory states | Physics | 7 | Expired |
| US7259039B2 | Memory device and methods of using and making the device | Electricity | 4 | Expired |
| US8879299B2 | Non-volatile memory cell containing an in-cell resistor | Electricity | 4 | Active |
| US6943370B2 | Control of memory arrays utilizing zener diode-like devices | Physics | 4 | Expired |
| US9704920B2 | Resistive random access memory containing a steering element and a tunneling dielectric element | Electricity | 2 | Active |
| US9269425B2 | Low forming voltage non-volatile storage device | Physics | 2 | Active |
| US8717803B2 | Metal-insulator-metal-insulator-metal (MIMIM) memory device | Electricity | 1 | Active |
| US8093680B1 | Metal-insulator-metal-insulator-metal (MIMIM) memory device | Electricity | 1 | Active |
| US7344913B1 | Spin on memory cell active layer doped with metal ions | Electricity | 1 | Expired |
| US7830015B2 | Memory device with improved data retention | Electricity | 1 | Active |
| US8709891B2 | Method and system for utilizing Perovskite material for charge storage and as a dielectric | Physics | 0 | Active |
| US8098521B2 | Method of providing an erase activation energy of a memory device | Performing Operations; Transporting | 0 | Active |
| US7968464B2 | Memory device with improved data retention | Electricity | 0 | Active |
| US9472758B2 | High endurance non-volatile storage | Physics | 0 | Active |
| US8373148B2 | Memory device with improved performance | Electricity | 0 | Active |
| US9576660B2 | Low forming voltage non-volatile storage device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.