Manufacturing method power semiconductor device
US8709895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2011 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Dec 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
The present invention provides a termination structure of a power semiconductor device and a manufacturing method thereof. The power semiconductor device has an active region and a termination region. The termination region surrounds the active region, and the termination structure is disposed in the termination region. The termination structure includes a semiconductor substrate, an insulating layer and a metal layer. The semiconductor substrate has a trench disposed in the termination region. The insulating layer is partially filled into the trench and covers the semiconductor substrate, and a top surface of the insulating layer has a hole. The metal layer is disposed on the insulating layer, and is filled into the hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.