Patent · US Active

Spalling utilizing stressor layer portions

US8709957B2 · kind B2 · utility

7Cited by
4References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 25, 2012
Grant dateApr 29, 2014
Priority date
Expiry dateAug 29, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface spanning across an entirety of the base substrate. At least one stressor layer portion having a shape is formed on at least a portion, but not all, of the uppermost surface of the base substrate. Spalling is performed which removes a material layer portion from the base substrate and provides a remaining base substrate portion. The material layer portion has the shape of the at least one stressor layer portion, while the remaining base substrate portion has at least one opening located therein which correlates to the shape of the at least one stressor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.