Memristive junction with intrinsic rectifier
US8710483B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2009 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Jul 10, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/73
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memristive junction (400) can comprise a first electrode (102) and second electrode (104), with a memristive region (106) situated between them. The memristive region is configured to switch between two activation states via a switching voltage (118) applied between the electrodes. The activation state can be ascertained by application of a reading voltage between the first electrode and second electrode. The junction further comprises a rectifier region situated at an interface (420) between the first electrode and the memristive region, and comprising a layer (402) of temperature-responsive transition material that is substantially conductive at the switching voltage and substantially resistive at the reading voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.