Semiconductor device and method of manufacturing the same
US8710485B2 · kind B2 · utility
11Cited by
2References
34Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 27, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Oct 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/84
Abstract
According to one embodiment, a semiconductor device includes a fin type stacked layer structure which has first to third semiconductor layers, and first to third layer select transistors to select one of the first to third semiconductor layers. The second layer select transistor is normally on in the second semiconductor layer, and is controlled to be on or off in the first and third semiconductor layers. A channel region of the second semiconductor layer which is covered with a gate electrode of the second layer select transistor has a metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.