Patent · US Active

MOS device for eliminating floating body effects and self-heating effects

US8710549B2 · kind B2 · utility

1Cited by

18References

6Claims

0Family size

Assignee

SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

Xiaolu Huang · Shanghai, CN
Jing Chen · Shanghai, CN
Xi Wang · Shanghai, CN
Deyuan Xiao · Shanghai, CN

Key dates

Filing date	Sep 7, 2010
Grant date	Apr 29, 2014
Priority date	—
Expiry date	Sep 7, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038

Abstract

A SOI MOS device for eliminating floating body effects and self-heating effects are disclosed. The device includes a connective layer coupling the active gate channel to the Si substrate. The connective layer provides electrical and thermal passages during device operation, which could eliminate floating body effects and self-heating effects. An example of a MOS device having a SiGe connector between a Si active channel and a Si substrate is disclosed in detail and a manufacturing process is provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.