Method and structure for adding mass with stress isolation to MEMS structures
US8710597B1 · kind B1 · utility
2Cited by
8References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 19, 2011 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Oct 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.