Magnetoresistive element and manufacturing method of the same

US8710604B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Koji Yamakawa · Tokyo, JP
• Katsuaki Natori · Yokohama, JP
• Daisuke Ikeno · Yokohama, JP
• Tadashi Kai · Yokohama, JP

Key dates

• Filing date: Mar 20, 2012
• Grant date: Apr 29, 2014
• Expiry date: Apr 28, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10

Abstract

In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic layer, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second diffusion prevention layer on the second interfacial magnetic layer, a second magnetic layer on the second diffusion prevention layer, and an upper electrode layer on the second magnetic layer. The ratio of a crystal-oriented part to the other part in the second interfacial magnetic layer is higher than the ratio of a crystal-oriented part to the other part in the first interfacial magnetic layer.