Magnetic memory and method of manufacturing the same

US8710605B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Shigeki Takahashi · Yokohama, JP
• Yuichi Ohsawa · Tsukuba, JP
• Junichi Ito · Ise, JP
• Chikayoshi Kamata · Kawasaki, JP
• Saori Kashiwada · Yokohama, JP
• Minoru Amano · Sagamihara, JP
• Hiroaki Yoda · Kawasaki, JP

Key dates

• Filing date: Sep 13, 2011
• Grant date: Apr 29, 2014
• Expiry date: Nov 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.