Semiconductor device

US8710624B2 · kind B2 · utility

Inventor

• Kazuaki Tonari · Yokohama, JP

Key dates

• Filing date: Dec 17, 2012
• Grant date: Apr 29, 2014
• Expiry date: Dec 17, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/033

Abstract

In a semiconductor device including a capacitor which has an upper electrode, a polycrystalline silicon layer on the upper electrode, and a metallic member on the polycrystalline silicon layer, the polycrystalline silicon layer includes germanium so that an upper portion of the polycrystalline silicon layer is lower than a lower portion thereof in a concentration of germanium.