Inspection systems and methods for detecting defects on extreme ultraviolet mask blanks
US8711346B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 10, 2010 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Nov 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are novel inspection methods and systems for inspecting unpatterned objects, such as extreme ultraviolet (EUV) mask blanks, for surface defects, including extremely small defects. Defects may include various phase objects, such as bumps and pits that are only about 1 nanometer in height, and small particles. Inspection is performed at wavelengths less than about 250 nanometers, such as a reconfigured deep UV inspection system. A partial coherence sigma is set to between about 0.15 and 0.5. Phase defects can be found by using one or more defocused inspection passes, for example at one positive depth of focus (DOF) and one negative DOF. In certain embodiments, DOF is between about −1 to −3 and/or +1 to +3. The results of multiple inspection passes can be combined to differentiate defect types. Inspection methods may involve applying matched filters, thresholds, and/or correction factors in order to improve a signal to noise ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.