Nonvolatile semiconductor memory device and method for controlling the same
US8711634B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2011 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Aug 4, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
During data read process, a control circuit gives a read voltage to a selected word line connected to a selected memory cell, and gives read pass voltages, for turning on memory cells, to unselected word lines connected to unselected memory cells. The control circuit respectively gives a first read pass voltage, a second read pass voltage, and a third read pass voltage to a first unselected word line adjacent to the selected word line at a side of at least one of a bit line and a source line, a second unselected word line adjacent to the first unselected word line at a side opposite to the selected word line, and a third unselected word line adjacent to the second unselected word line at a side opposite to the selected word line. The second read pass voltage is higher than the third read pass voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.