Electron-beam lithography method with correction of line ends by insertion of contrast patterns
US8713499B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 13, 2011 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Apr 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3174
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of electron-beam lithography is provided, notably for technologies of critical dimension of the order of 22 nm. In such methods applied notably to networks of lines, the methods of the prior art do not offer precise and efficient correction of the shortenings of line ends. The method provided solves this problem by carrying out the insertion of contrast intensification structures of types which are optimized for the structure of the lines to be corrected. The method allows the semi-automatic or automatic calculation of the dimensions and locations of said structures. Advantageously, these calculations may be modeled to produce a target design, derived from libraries of components. They may be supplemented with a joint optimization of the size of the etchings and of the radiated doses, as a function of the process energy latitude.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.