Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrate
US8715413B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 16, 2010 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Mar 6, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/186
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides a method for manufacturing a Group III nitride semiconductor crystal. The method includes the steps of preparing a seed crystal and performing a convex surface-growing step to grow the group III nitride semiconductor crystal. The growth surface of the group III nitride semiconductor crystal is constituted only by a plurality of surfaces not vertical to a growth direction and the group III nitride semiconductor crystal grows while forming a convex shape as a whole by the growth surface constituted of the plurality of surfaces. The invention also provides a method for manufacturing a group III nitride semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.