Method of fabricating isolation structure
US8716104B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2012 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an isolation structure of a semiconductor device includes the following steps. Firstly, a substrate including a first surface and a second surface is provided. At least one trench is formed in the first surface of the substrate. The trench has a sidewall and a bottom surface. Then, a first chemical vapor deposition process is performed to form a first isolation layer on the first surface of the substrate and the sidewall and the bottom surface of the trench. Then, an anisotropic surface treatment process is performed, so that a surface of the first isolation layer has differential surface chemical properties. Afterwards, a second chemical vapor deposition process is performed to form a second isolation layer on the first isolation layer with a surface having differential surface chemical properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.